300-GHz-Band InP HBT Power Amplifier Module Enabling 280-Gb/s 0-dBm Signal Generation With Digital Predistortion
This letter presents a 300-GHz-band power amplifier (PA) module implementing a PA integrated circuit (IC) fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The PA module achieved a maximum gain of 30 dB, maintaining over 20-dB gain across the 220–310-GHz range, with a saturated output power of 9.1dBm. We applied a spectral digital predistortion (DPD) method to compensate for the distortion of the PA module and achieved a 280-Gb/s (35-GBaud 256QAM) signal generation at 0-dBm output power, which is the highest data rate reported in the 300-GHz band.
Authors
- Munehiko Nagatani (ORCID: https://orcid.org/0000-0003-2744-3058)
- Teruo Jyo (ORCID: https://orcid.org/0000-0001-8297-3911)
- Yuta Shiratori (ORCID: https://orcid.org/0000-0001-8074-455X)
- Hiroaki Katsurai (ORCID: https://orcid.org/0009-0002-8115-3860)
- Sam Kusano
- Hiroshi Hamada (ORCID: https://orcid.org/0000-0002-8637-1843)
- Miwa Mutoh
- Hiroyuki Takahashi (ORCID: https://orcid.org/0000-0002-2409-1475)
Institutions
- NTT (Japan) (JP)
- Keysight Technologies (United States) (US)
Publication Details
- Journal
- IEEE Microwave and Wireless Technology Letters
- Published
- 2025-05-06
- DOI
- https://doi.org/10.1109/lmwt.2025.3564601
- Citations
- 2
- Primary Topic
- Radio Frequency Integrated Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 1.46