Patterned Co/CoO films for next generation data storage

Co and CoO thin films were deposited by magnetron sputtering in the form of multilayers. They were irradiated with Ar and Si ion beams of different energies and fluences causing patterned structures resembling isolated FM/AFM units separated by insulating SiO 2 . The structures resembling exchange bias (EB) stabilised multi tunnel junctions (MTJs) featuring non-volatile memory (NVM), an enhancement in data storage capacities. A re-configuration of spin with temperature was evident from the EB gradient (EBG) with temperature.