Aluminum Scandium Nitride as a Functional Material at 1000 °C (Adv. Electron. Mater. 6/2025)
Piezoelectrics Aluminum scandium nitride (AlScN) exhibits remarkable ferroelectric, piezoelectric, and dielectric stability at extreme temperatures. In article number 2400849, Roozbeh Tabrizian and co-workers demonstrate the robust performance of TaSi2/AlScN/TaSi2 capacitors up to 1000 °C, revealing a substantial increase in piezoelectricity and a marked reduction in coercive field. These findings establish AlScN as a key functional material for space, hypersonics, deep-well, and nuclear reactor applications.
Authors
- Philip G. Neudeck (ORCID: https://orcid.org/0000-0002-2968-4712)
- Garrett Baucom (ORCID: https://orcid.org/0009-0006-8768-838X)
- Roozbeh Tabrizian (ORCID: https://orcid.org/0000-0003-1245-8564)
- Jinghan Gao (ORCID: https://orcid.org/0000-0002-0260-5412)
- Mark Sheplak (ORCID: https://orcid.org/0009-0002-3656-3051)
- Shaurya Dabas
- David J. Spry
- Philip X.‐L. Feng (ORCID: https://orcid.org/0000-0002-1083-2391)
- Honggyu Kim (ORCID: https://orcid.org/0000-0002-1067-4434)
- Tingting Yin (ORCID: https://orcid.org/0000-0001-6645-8709)
- V. Gaddam (ORCID: https://orcid.org/0000-0002-0175-5881)
- Nicholas G. Rudawski (ORCID: https://orcid.org/0000-0003-4318-5597)
- Ethan Angerhofer
Institutions
- Glenn Research Center (US)
- University of Florida (US)
Publication Details
- Journal
- Advanced Electronic Materials
- Published
- 2025-05-01
- DOI
- https://doi.org/10.1002/aelm.202570017
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00