Enhanced performance of tin sulfide thin-film solar cells via silicon substrate integration: a combined experimental and simulation study

This work presents a hybrid study that employs Ultrasonic Spray method for the deposition of SnS absorber films and SCAPS-1D simulation method for the analysis of various solar cell topologies. Different deposition times have been employed to optimize structural, optics, and electrical properties. To evaluate their potential as absorber layers for solar cells, the films were analyzed by using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and tested for electrical performance. Complementary numerical simulations were carried out with SCAPS-1D in modeling ZnO:Al/i-ZnO/SnS2/SnS solar cell structures. Results showed that optimized SnS thickness of 2.5 µm and high carrier density improve the performance of the devices and with a maximum of 6.37% PCE when integrated with silicon substrates.

Authors

Publication Details

Journal
Chalcogenide Letters
Published
2025-05-05
DOI
https://doi.org/10.15251/cl.2025.224.331
Citations
1
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.73
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article

Enhanced performance of tin sulfide thin-film solar cells via silicon substrate integration: a combined experimental and simulation study

Mehieddine Bouatrous, O. Kamli, Naoual Houaidji, Lilia Zighed et al.
1 citations
Chalcogenide Letters
Chalcogenide Semiconductor Thin Films
0.73
article

Enhanced performance of tin sulfide thin-film solar cells via silicon substrate integration: a combined experimental and simulation study

Mehieddine Bouatrous, O. Kamli, Naoual Houaidji, Lilia Zighed, Zakaria Hadef, Kenza Kamli, O. Mekhbi
article en
1 citations

Abstract

This work presents a hybrid study that employs Ultrasonic Spray method for the deposition of SnS absorber films and SCAPS-1D simulation method for the analysis of various solar cell topologies. Different deposition times have been employed to optimize structural, optics, and electrical properties. To evaluate their potential as absorber layers for solar cells, the films were analyzed by using X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), and tested for electrical performance. Complementary numerical simulations were carried out with SCAPS-1D in modeling ZnO:Al/i-ZnO/SnS2/SnS solar cell structures. Results showed that optimized SnS thickness of 2.5 µm and high carrier density improve the performance of the devices and with a maximum of 6.37% PCE when integrated with silicon substrates.

Chalcogenide LettersVol. 22(4)
Openalex Percentile: Top 29%
Chalcogenide Semiconductor Thin Films
0.73
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Enhanced performance of tin sulfide thin-film solar cells via silicon substrate integration: a combined experimental and simulation study — Mehieddine Bouatrous, O. Kamli, et al. · Chalcogenide Letters (2025) | TGRS Research Map | TGRS