Monochromatic recombination velocities S_f (α_λ,H) and S_b (α_λ,H))at both (n+/p) and (p/p+) surfaces of front (n+/p/p+) illuminated silicon solar cell, are applied to determine the (p) base optimum thickness

The monochromatic expressions of the minority charge carriers' recombination velocity at the junction and at the back of the base of the (n+/p/p+) crystalline silicon solar cell, are graphically represented versus base depth, for given monochromatic absorption coefficient value.The (p) base optimum thickness is deduced by the intercept point on the curves and is then modeled as a function of the absorption coefficient of the (Si) material according to the wavelength of the incident monochromatic light.The results can be used to influence the material economy in the solar cell manufacturing process.