Monochromatic recombination velocities (S_f2 (B,α_λ,H)) and 〖(S〗_b2 (B,α_λ,H))at both (n+/p) and (p/p+) surfaces of (n+/p/p+) silicon solar cell under applied magnetic field to determine (p) base optimum thickness

The monochromatic expressions of the minority carriers' recombination velocity at the junction and on the back side of the base of the crystalline silicon solar cell (n+/p/p+) under steady state, are graphically represented as a function of base depth, for values of the intensity of the applied magnetic field.The optimum thickness of the (p) base is deduced and modelled as a function of the magnetic field, and the diffusion coefficient, for given values of the absorption coefficient of the material.These results make it possible to influence the material economy in the solar cell manufacturing process.