Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system

Aluminum oxynitride (AlOxNy) films with nitrogen content ranging from 2.51% to 6.38% were employed as gate dielectrics in GaN-based metal–insulator–semiconductor (MIS) structures. These films were deposited using a plasma-enhanced atomic layer deposition system through alternating cycles of AlN and Al2O3. X-ray photoelectron spectroscopy analysis of the Al 2p and N 1s peaks shows that the AlOxNy films contain Al–N, Al–O, and N–Al–O bonds, suggesting the appearance of ternary compound AlOxNy. Capacitance–voltage (C–V) measurements reveal that both fixed charge density (Nfix) and the interface trap density (Dit) in all AlOxNy samples are significantly lower than those in Al2O3 samples. Especially, with the increasing nitrogen compositions, the 6.38 N% AlON sample exhibits an exceptionally low Dit of ∼1011 cm−2eV−1. These results provide an effective approach to realizing more reliable and stable GaN-based MIS-high-electron-mobility transistors.

Authors

Institutions

Publication Details

Journal
Applied Physics Letters
Published
2025-05-05
DOI
https://doi.org/10.1063/5.0256227
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system

Yong Cai, Lihua Yin, Junmin Xue, Zeng‐Yuan Wu et al.
1 citations
Applied Physics Letters
GaN-based semiconductor devices and materials
1.26
article

Interface quality improvement of metal/AlOxNy/AlGaN/GaN MIS-heterojunction by using alternative AlOxNy growth in PEALD system

Yong Cai, Lihua Yin, Junmin Xue, Zeng‐Yuan Wu, Qinqin Jing, Yujie Peng, Yu Li, Chen Wang, Xiaodong Zhang, Juan Xin, Yang Xiao, Yaming Fan, Heng Wang
article en
1 citations

Abstract

Aluminum oxynitride (AlOxNy) films with nitrogen content ranging from 2.51% to 6.38% were employed as gate dielectrics in GaN-based metal–insulator–semiconductor (MIS) structures. These films were deposited using a plasma-enhanced atomic layer deposition system through alternating cycles of AlN and Al2O3. X-ray photoelectron spectroscopy analysis of the Al 2p and N 1s peaks shows that the AlOxNy films contain Al–N, Al–O, and N–Al–O bonds, suggesting the appearance of ternary compound AlOxNy. Capacitance–voltage (C–V) measurements reveal that both fixed charge density (Nfix) and the interface trap density (Dit) in all AlOxNy samples are significantly lower than those in Al2O3 samples. Especially, with the increasing nitrogen compositions, the 6.38 N% AlON sample exhibits an exceptionally low Dit of ∼1011 cm−2eV−1. These results provide an effective approach to realizing more reliable and stable GaN-based MIS-high-electron-mobility transistors.

Applied Physics LettersVol. 126(18)
University of Science and Technology of China (CN), Chinese Academy of Sciences (CN), Peking University (CN), Suzhou University of Science and Technology (CN), Suzhou Institute of Nano-tech and Nano-bionics (CN), Institute of Nanotechnology (GB)
Key Research and Development Program of Jiangxi Province
Openalex Percentile: Top 22%
GaN-based semiconductor devices and materials
1.26
DOISourceOpenAlex
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.