Exploring the potential of lead-free ASnI2Br-based tandem 4 T and 2 T configurations: a comprehensive TCAD analysis
Abstract To meet the growing demand for eco-friendly solar technologies, lead-free perovskite (PVK) materials are emerging as promising alternatives to their lead-based counterparts. Among these, ASnI 2 Br stands out due to its suitable wide bandgap, making it a strong candidate for integration into both 4T and 2T tandem configurations. In pursuit of a fully eco-friendly solar cell design, we present the development of lead-free ASnI 2 Br/Si tandem solar cells, offering a sustainable approach with high potential for efficiency improvements. First, the advancement of 4 T tandem cell efficiency is discussed. The main structure consists of FTO/PEDOT:PSS/ASnI 2 Br-PVK/C 60 /BCP/Ag inverted structure as the top cell and an n-type Si as the rear cell. Based on the simulation findings, the suggested top cell structure performs much better when TiO 2 is substituted as the electron transport layer instead of C 60 , while CuSCN is found to be a good replacement for PEDOT:PSS as a hole transport layer. With these changes, the top cell's efficiency becomes 15.29%. In addition, optimizations for the bottom cell are carried out. Efficiencies for bare and filtered bottom cells reaching 23.97 and 12.53% are achieved, respectively, at 30 µm absorber thickness and 1 ms lifetime. With only two terminals, the 2 T cell has fewer manufacturing costs for the photovoltaic module than the 4 T cell. Thus, we introduce a design for a 2 T cell by converting the enhanced 4 T cell, while inverting the top cell to be compatible with the rear cell n-p structure. To ensure current matching, the correct thickness must be established for both sub-cells, where the thickness of the perovskite absorption layer rises from 200 to 545 nm. This led to reaching the matching point at a current equal to 16.35 mA/cm 2 , and our simulation for the monolithic stacked 2T TSC produced a PCE of 24.28%.
Authors
- Ahmed Shaker (ORCID: https://orcid.org/0000-0001-6602-7343)
- Tarek M. Abdolkader (ORCID: https://orcid.org/0000-0002-9885-1502)
- M. D. Asham (ORCID: https://orcid.org/0000-0002-1937-8236)
- H. A. El-Demsisy
- I. Maged
Institutions
- Ain Shams University (EG)
- Benha University (EG)
Publication Details
- Journal
- Indian Journal of Physics
- Published
- 2025-05-05
- DOI
- https://doi.org/10.1007/s12648-025-03600-5
- Citations
- 3
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 2.19
Funders
- Ain Shams University