Exploring the thermal properties of gallium sulfide (GaS) for high-temperature applications

Abstract The thermal stability and decomposition behavior of gallium sulfide (GaS) material are critical factors in determining its suitability for high-temperature applications. This study comprehensively investigates the GaS compound using thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC) to assess its thermal stability, decomposition mechanisms, and potential applications. TGA results revealed that GaS exhibits remarkable thermal stability up to 722 °C, with a significant weight loss observed at temperatures exceeding 786 °C. The activation energy for the key decomposition process between 722 and 786 °C was calculated to be 257 kJ/mol, indicating an energy-intensive reaction involving sulfur evaporation and structural reorganization. DTA analysis highlighted a major endothermic event at 789 °C. Additionally, DSC analysis identified two thermal processes with activation energies of 117 and 53 kJ/mol, respectively. These findings demonstrate that GaS not only maintains its structural integrity at high temperatures but also possesses unique thermal properties, making it a promising candidate for high-temperature electronics, thermophotovoltaics, and sensor technologies where thermal robustness is essential.

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Publication Details

Journal
Applied Physics A
Published
2025-05-05
DOI
https://doi.org/10.1007/s00339-025-08555-2
Citations
2
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
1.46
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article

Exploring the thermal properties of gallium sulfide (GaS) for high-temperature applications

Gözde Altuntaş, N.M. Gasanly, M. Isik
2 citations
Applied Physics A
Chalcogenide Semiconductor Thin Films
1.46
article

Exploring the thermal properties of gallium sulfide (GaS) for high-temperature applications

Gözde Altuntaş, N.M. Gasanly, M. Isik
article en
2 citations

Abstract

Abstract The thermal stability and decomposition behavior of gallium sulfide (GaS) material are critical factors in determining its suitability for high-temperature applications. This study comprehensively investigates the GaS compound using thermogravimetric analysis (TGA), differential thermal analysis (DTA), and differential scanning calorimetry (DSC) to assess its thermal stability, decomposition mechanisms, and potential applications. TGA results revealed that GaS exhibits remarkable thermal stability up to 722 °C, with a significant weight loss observed at temperatures exceeding 786 °C. The activation energy for the key decomposition process between 722 and 786 °C was calculated to be 257 kJ/mol, indicating an energy-intensive reaction involving sulfur evaporation and structural reorganization. DTA analysis highlighted a major endothermic event at 789 °C. Additionally, DSC analysis identified two thermal processes with activation energies of 117 and 53 kJ/mol, respectively. These findings demonstrate that GaS not only maintains its structural integrity at high temperatures but also possesses unique thermal properties, making it a promising candidate for high-temperature electronics, thermophotovoltaics, and sensor technologies where thermal robustness is essential.

Applied Physics AVol. 131(6)
Izmir University (TR), İzmir University of Economics (TR), Baku State University (AZ), Middle East Technical University (TR), Azerbaijan International University (AZ), Gazi University (TR)
Openalex Percentile: Top 18%
Chalcogenide Semiconductor Thin Films
1.46
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