Semiconductor laser based on large phase-shifted Bragg grating structure

We propose and experimentally demonstrate a monolithically integrated multiwavelength laser based on a large phase-shifted Bragg grating structure via e-beam lithography. The laser can produce multiple wavelengths simultaneously with a wavelength spacing of 90 GHz under the 25°C controlled by the thermoelectric cooler, in which four wavelengths operate with the side-mode suppression ratio above 40 dB. Furthermore, 12 wavelength lines are achieved via electro-optic modulation with 5.3 dB flatness. We provide a compact and low-cost way to realize the multiwavelength source.

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Publication Details

Journal
Optical Engineering
Published
2025-05-05
DOI
https://doi.org/10.1117/1.oe.64.5.056102
Primary Topic
Photonic and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Semiconductor laser based on large phase-shifted Bragg grating structure

Xiaodong Chen, Wei Lin, Hongying Guo, Huibin Chen
Optical Engineering
Photonic and Optical Devices
article

Semiconductor laser based on large phase-shifted Bragg grating structure

Xiaodong Chen, Wei Lin, Hongying Guo, Huibin Chen
article en

Abstract

We propose and experimentally demonstrate a monolithically integrated multiwavelength laser based on a large phase-shifted Bragg grating structure via e-beam lithography. The laser can produce multiple wavelengths simultaneously with a wavelength spacing of 90 GHz under the 25°C controlled by the thermoelectric cooler, in which four wavelengths operate with the side-mode suppression ratio above 40 dB. Furthermore, 12 wavelength lines are achieved via electro-optic modulation with 5.3 dB flatness. We provide a compact and low-cost way to realize the multiwavelength source.

Optical EngineeringVol. 64(05)
Quanzhou Normal University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 92%
Photonic and Optical Devices
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