Low Thermal Conductivity in Single Crystalline Mg <sub>3</sub> Bi <sub>2</sub> and Its Thermopower Enhanced by Electron‐Phonon Interaction
Promising thermoelectric materials are usually those of "phonon-glass electron-crystal" (PGEC) compounds, with low thermal conductivity and high carrier mobility. In metallic materials, strong electron-phonon interaction usually causes an increase of Seebeck coefficient (S) at low temperature, due to an extra electrical current driven by heat-carrying phonons, named phonon drag effect. Here, this study reports that single crystalline metallic Mg<sub>3</sub>Bi<sub>2</sub> has low lattice thermal conductivity of ≈0.49 W m<sup>-1</sup> K<sup>-1</sup> at 285 K, and corresponding mean free path of phonons (L<sub>ph</sub>) is ≈0.48 nm, with carrier mobility of ≈54.2 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> around room temperature. It is found that S exhibits an increase as a "hump" ≈20 K, and phonon drag effect (S<sub>ph</sub>) contributes to ≈80%, significantly higher than diffusive electrons. Meanwhile, S<sub>ph</sub> is positively proportional to L<sub>ph</sub>, where coefficient of S<sub>ph</sub>/L<sub>ph</sub> is ≈4.6 × 10<sup>2</sup> µV K<sup>-1</sup> µm<sup>-1</sup>, twice that of CrSb<sub>2</sub> and FeSb<sub>2</sub>, and relative strength of electron-phonon interaction is ≈0.12. The L<sub>ph</sub>-intercept of S<sub>ph</sub>/L<sub>ph</sub> approaches to ≈4.68 nm, where phonons can be strongly scattered before interacting with electrons, leading to a negligible phonon drag effect. The findings shed light on fundamental understanding of thermoelectric transport and exploring novel thermoelectric materials.
Authors
- Qiang Feng
- Huili Liu (ORCID: https://orcid.org/0000-0001-8959-0315)
- Jiayi He (ORCID: https://orcid.org/0009-0002-1906-6731)
- Wenyang Wang
Institutions
- ShanghaiTech University (CN)
Publication Details
- Journal
- Advanced Science
- Published
- 2025-05-05
- DOI
- https://doi.org/10.1002/advs.202416518
- Citations
- 4
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 2.07
Funders
- ShanghaiTech University