High‐Efficiency Optoelectronic Modulation in Quasi‐2D Perovskite‐Based Transistors for Neuromorphic Computing

Abstract Optoelectronic modulated transistors based on organic–inorganic halide perovskites can perceive and parse visual information, making them appealing for neuromorphic computing or future vision automation owing to their abundant and tunable optoelectronic properties, high quantum efficiency, and large specific surface area. Herein, quasi‐2D (ThMA) 2 (MA) n‐1 Pb n I 3n+1 ( n = 4) transistor exhibits n/p‐type ambipolar transport characteristics. The remarkable hysteresis behavior observed in the transfer characteristics can be modulated by external voltages and illumination. The ambipolar quasi‐2D (ThMA) 2 (MA) n‐1 Pb n I 3n+1 ( n = 4) transistor exhibits maximum charge mobility under light illumination with hole mobility ( µ h ) of ≈1.5 × 10 −4 cm 2 V −1 s −1 (≈167 times higher than that in the dark condition), threshold voltage ( V th ) of 2.1 V, and subthreshold swing ( SS ) of 3.4 V decade −1 for the p‐channel mode, and electron mobility ( µ e ) of ≈1.9 × 10 −4 cm 2 V −1 s −1 , V th of 3.1 V, and SS of 1.7 V decade −1 for the n‐channel mode, respectively. The effects of light illumination on the potentiation and depression properties of the proposed device are discussed. The Chinese handwritten characters from the Institute of Automation of the Chinese Academy of Sciences are used to simulate the image recognition properties. The quasi‐2D perovskite offers a new platform for the development of optoelectronic neuromorphic systems and bionic vision.