Exploring the impact of thickness on the electrical, optical, and structural properties of p-InSb thin films

Researchers have fabricated non-stoichiometric InSb thin films of varying thicknesses through thermal evaporation. The technique involves depositing nanocrystalline p-InSb semiconducting layers on glass substrates at room temperature using an optimized source material. The resulting p-type InSb films had thicknesses ranging from 150 nm to 450 nm. This study investigated the effect of thickness on the electrical, optical, and structural properties of p-InSb thin films. Structural analysis was conducted using grazing angle Xray diffraction (GIXRD), which revealed a polycrystalline zinc-blend structure with a preferred orientation along the 220 planes. The research found a peak hole mobility of 2.01E+04 cm2 /V-s. A high carrier mobility, a characteristic feature of 2D materials, is essential for the development of advanced optoelectronic and electronic devices.