A Field-Free and Power-Efficient Write Pulse Scheme for Deterministic Switching in Perpendicular Magnetic Tunnel Junction Devices at Room Temperature

Perpendicularly magnetization magnetic tunnel junctions (p-MTJs) comprising heavy metals (HMs) and topological insulators (TIs) as spin-source materials are employed to achieve field-free deterministic switching with the assistance of spin-transfer torque (STT) or voltage-controlled magnetic anisotropy (VCMA). Antiferromagnetic and transition-metal dichalcogenides (TMDs) are also alternatives for field-free switching spin-source materials. A single-domain compact model modeled by modified Landau–Lifshitz–Gilbert (LLG) equations characterizes the dynamics of the different Spin-orbit torque (SOT) channel materials mentioned above following the input of different write pulse schemes. A notable correlation exists between switching time and power consumption and the alteration of pulsewidth and amplitude parameters within the write pulse scheme. The spike-shaped SOT current pulse offers an enhanced switching solution with reduced power consumption. The width and amplitude of the STT current or VCMA voltage pulses for assisted switching can be modified to align with the specific characteristics of the SOT material in question. It is possible to achieve a maximum optimization of over 86% in terms of switching time and power consumption with different write pulses.