P-Type Doped Si-Tip With Modulation and Extraction Gates for Precise Active Control of Stable Field Electron Emission

Precise active control of field electron emission was achieved by a p-type Si-tip integrated with vertically stacked two gates, i.e., modulation gate at the bottom and extraction gate at the top. The modulation gate voltage controls the carrier distribution and transport in the substrate and thus modulates the current supply, while the extraction gate voltage induces the electron emission from the Si-tip. The double-gated device was fabricated using IC-compatible process with self-aligned method. The emission current was well-controlled with a high I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub>/I<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub>=747 by a V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">m</sub> of -9 6 V and V<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> of 80 V. A precise on-state current control accuracy of 32.8 pA/mV with well stability was achieved. The device would greatly facilitate its applications in modern vacuum nanoelectronics.