Integration Challenges on 300-mm High Resistivity Silicon Substrates

A review of 300mm high-resistivity Czochralski silicon (Cz-Si) wafers after optimized thermal treatments, is presented. The challenge of resistivity monitoring due to the thermal donors phenomenon is highlighted. A new protocol based on the combination of several metrology techniques is proposed. Such a methodology is crucial as oxygen-related defects called thermal donors (TD) formed during 450° C anneals are electrically active across various substrates: n-type used typically in insulated-gate bipolar transistors (IGBT) and p-type used for example in radiofrequency (RF)-based technologies. We show that such TDs result in resistivity loss, with different behavior depending on substrate doping, and confirm the detrimental impact of these TDs on devices performances.