5.3 mW at 80°C, single-mode high-power 795 nm VCSEL achieved solely through intracavity design

We designed a vertical-cavity surface-emitting laser (VCSEL) that achieved high-power single-mode output with a 6 µm oxide aperture solely through cavity design. Anti-waveguide design was used to suppress the in-plane mode, which enhances the oscillation strength of the vertical cavity modes. By reducing the overlap between the oxide region and the standing wave, we minimize the refractive index difference of the columnar waveguide. Combined with the introduction of a λ/2 second cavity, The LP<sub>11</sub> mode is diffused into the oxidation region about 1/3, so the single mode operation was obtained. The fabricated 795 nm VCSEL achieves a maximum single-mode output power of 6.6 mW at 20°C and 5.3 mW at 80°C.

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Publication Details

Journal
Optics Express
Published
2025-05-05
DOI
https://doi.org/10.1364/oe.561214
Citations
1
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.73

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article

5.3 mW at 80°C, single-mode high-power 795 nm VCSEL achieved solely through intracavity design

Yinli Zhou, Chao Chen, Cao Yu, Jingfei Mu et al.
1 citations
Optics Express
Semiconductor Lasers and Optical Devices
0.73
article

5.3 mW at 80°C, single-mode high-power 795 nm VCSEL achieved solely through intracavity design

Yinli Zhou, Chao Chen, Cao Yu, Jingfei Mu, Xiaoyan Gao, Tianqi Zhang, Tianjiao Liu, Guanghui Yuan, Zhuo Zhang, Xing Zhang, Jianwei Zhang, Yongqiang Ning, Yuehui Xu, Lijun Wang
article en
1 citations

Abstract

We designed a vertical-cavity surface-emitting laser (VCSEL) that achieved high-power single-mode output with a 6 µm oxide aperture solely through cavity design. Anti-waveguide design was used to suppress the in-plane mode, which enhances the oscillation strength of the vertical cavity modes. By reducing the overlap between the oxide region and the standing wave, we minimize the refractive index difference of the columnar waveguide. Combined with the introduction of a λ/2 second cavity, The LP<sub>11</sub> mode is diffused into the oxidation region about 1/3, so the single mode operation was obtained. The fabricated 795 nm VCSEL achieves a maximum single-mode output power of 6.6 mW at 20°C and 5.3 mW at 80°C.

Optics ExpressVol. 33(11)
Chinese Academy of Sciences (CN), Changchun Institute of Optics, Fine Mechanics and Physics (CN), Applied Photonics (United Kingdom) (GB), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, China Postdoctoral Science Foundation
Affordable and clean energy
Openalex Percentile: Top 29%
Semiconductor Lasers and Optical Devices
0.73
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5.3 mW at 80°C, single-mode high-power 795 nm VCSEL achieved solely through intracavity design — Yinli Zhou, Chao Chen, et al. · Optics Express (2025) | TGRS Research Map | TGRS