Dual effects of Au nanorods to enhance the electroluminescence of Si-based perovskite light-emitting devices

Silicon-based perovskite light-emitting devices (Si-based PeLEDs) currently attract much attention because of their potential applications in optoelectronic integrations. However, up to now, the device's performance is still unsatisfactory. Here, we propose an approach to improve the electroluminescence of Si-based PeLEDs by introducing Au nanorods into the hole transport layer. The Au nanorods can enhance the local electric field due to the surface plasmon resonance effect around the near-infrared emission wavelength, as well as reduce the injection barrier of holes due to the changed surface potential in the hole transfer layer. Consequently, the peak external quantum efficiency of the device is about 10.4%, and the emission intensity is enhanced 12 times compared with that of the reference device without Au nanorods.