Accelerated Growth in Laser‐Trapped MAPbBr ₃ Perovskite Crystals

Abstract This study investigates the laser trapping‐induced crystallization kinetics of MAPbBr₃ perovskites, a class of materials pivotal for advancing next‐generation optoelectronic devices such as solar cells, LEDs, and lasers. By employing a 1064 nm continuous‐wave laser to initiate nucleation and growth at the air‐solution interface. Optical characterization confirmed the formation of high‐quality MAPbBr₃ crystals, evidenced by a 2.3 eV bandgap, a sharp 540 nm emission peak, and a cubic crystal structure, all indicative of superior optoelectronic properties. Kinetic analysis revealed that laser‐trapped crystals follow zero‐order growth kinetics, with a rate constant of 0.3715 mol/(L·min) and a remarkably short half‐life of 1.86 min. In stark contrast, conventional inverse temperature crystallization (ITC) exhibited a 31‐fold slower rate (0.0119 mol/(L·min)) and a prolonged half‐life of 54.4 min, despite also adhering to zero‐order kinetics. This dramatic acceleration underscores the efficiency of laser trapping in overcoming kinetic barriers, enabling rapid and controlled crystal growth. The significance of this research lies in its potential to revolutionize perovskite synthesis. By elucidating the mechanisms of laser‐driven crystallization, this work provides a foundation for scalable, high‐throughput production of perovskites with tailored properties, essential for industrial applications.