Structural, Morphological, Compositional, Electrical, and Optical Characterizations of CuZnS Thin Films Prepared using Chemical Bath Deposition Method

The universality, affordability and abundance of solar energy combined with its free and high energy output make it an exceptional renewable energy source. Solar cells play a vital role in converting sunlight into electrical energy. CuZnS has gained significant attention as a potential absorber material for solar cells. In the present work, we report the preliminary results of the preparation of CuZnS thin films using a relatively low-cost Chemical Bath Deposition technique from a precursor solution containing 0.1M concentrations of copper chloride, zinc chloride, and thiourea. Triethanolamine (TEA) is used as the complexing agent, and ammonia is used to control the pH of the solution. The samples were prepared by keeping the pH at 11.6, maintaining the temperature at 80°C, and a deposition time of 1 hour. Structural, morphological, compositional, electrical, and optical analyses of the prepared sample were done. From the SEM analysis grain size calculated is 177 nm. The observed bandgap value was 2.61 eV at a Cu/(Cu+Zn) ratio of 83%. The prepared sample is a p-type semiconductor with a conductivity 1.646X10-3Ω-1cm-1. XRD [Bruker Kappa Apex II], SEM-EDAX [Jeol 6390LA/OXFORD XMX N], Hall effect measurement system [Ecopia HMS 3000s], and UV-Vis Spectrophotometry [JASCO V-670 UV-Vis NIR Spectrophotometer] were used for the characterization of the samples.

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Publication Details

Journal
Journal of Condensed Matter
Published
2025-05-04
DOI
https://doi.org/10.61343/jcm.v3i02.77
Primary Topic
Chalcogenide Semiconductor Thin Films
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article
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article

Structural, Morphological, Compositional, Electrical, and Optical Characterizations of CuZnS Thin Films Prepared using Chemical Bath Deposition Method

S. Bini, K. C. Preetha
Journal of Condensed Matter
Chalcogenide Semiconductor Thin Films
article

Structural, Morphological, Compositional, Electrical, and Optical Characterizations of CuZnS Thin Films Prepared using Chemical Bath Deposition Method

S. Bini, K. C. Preetha
article en

Abstract

The universality, affordability and abundance of solar energy combined with its free and high energy output make it an exceptional renewable energy source. Solar cells play a vital role in converting sunlight into electrical energy. CuZnS has gained significant attention as a potential absorber material for solar cells. In the present work, we report the preliminary results of the preparation of CuZnS thin films using a relatively low-cost Chemical Bath Deposition technique from a precursor solution containing 0.1M concentrations of copper chloride, zinc chloride, and thiourea. Triethanolamine (TEA) is used as the complexing agent, and ammonia is used to control the pH of the solution. The samples were prepared by keeping the pH at 11.6, maintaining the temperature at 80°C, and a deposition time of 1 hour. Structural, morphological, compositional, electrical, and optical analyses of the prepared sample were done. From the SEM analysis grain size calculated is 177 nm. The observed bandgap value was 2.61 eV at a Cu/(Cu+Zn) ratio of 83%. The prepared sample is a p-type semiconductor with a conductivity 1.646X10-3Ω-1cm-1. XRD [Bruker Kappa Apex II], SEM-EDAX [Jeol 6390LA/OXFORD XMX N], Hall effect measurement system [Ecopia HMS 3000s], and UV-Vis Spectrophotometry [JASCO V-670 UV-Vis NIR Spectrophotometer] were used for the characterization of the samples.

Journal of Condensed MatterVol. 3(02)
University of Calicut (IN)
Openalex Percentile: Top 92%
Chalcogenide Semiconductor Thin Films
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Structural, Morphological, Compositional, Electrical, and Optical Characterizations of CuZnS Thin Films Prepared using Chemical Bath Deposition Method — S. Bini, K. C. Preetha · Journal of Condensed Matter (2025) | TGRS Research Map | TGRS