Volatile MoS<sub>2</sub> Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications
Artificial Neuron Applications The image shows a SiO2/Si substrate with multiple Pd/MoS2/Ag-Al memristors. The front device is electrically biased, demonstrating how Ag migration along the multilayered MoS2 surface induces volatile resistive switching. More in article number 2400523, Alwin Daus, Max Christian Lemme, and co-workers.
Authors
- Annika Grundmann (ORCID: https://orcid.org/0000-0002-0836-7793)
- Lukas Völkel (ORCID: https://orcid.org/0000-0002-8138-9980)
- Enrique G. Marín (ORCID: https://orcid.org/0000-0002-0302-3764)
- Joachim Mayer (ORCID: https://orcid.org/0000-0003-3292-5342)
- M. Heuken (ORCID: https://orcid.org/0000-0001-9739-9692)
- Ke Ran (ORCID: https://orcid.org/0000-0002-9762-4586)
- A. Godoy (ORCID: https://orcid.org/0000-0002-3014-8765)
- Sofía Cruces (ORCID: https://orcid.org/0000-0003-2816-7016)
- Andrei Vescan (ORCID: https://orcid.org/0000-0001-9465-2621)
- H. Kalisch (ORCID: https://orcid.org/0009-0000-4475-3766)
- Dennis Braun (ORCID: https://orcid.org/0000-0003-2803-1784)
- Mohit D. Ganeriwala (ORCID: https://orcid.org/0000-0003-4682-3435)
- Alwin Daus (ORCID: https://orcid.org/0000-0001-7461-3756)
- Max C. Lemme (ORCID: https://orcid.org/0000-0003-4552-2411)
- Jimin Lee (ORCID: https://orcid.org/0000-0002-5877-6958)
Institutions
- University of Freiburg (DE)
- Forschungszentrum Jülich (DE)
- Universidad de Granada (ES)
- Aixtron (Germany) (DE)
- Ernst Ruska Centre (DE)
- AMO (Germany) (DE)
- RWTH Aachen University (DE)
Publication Details
- Journal
- Small Science
- Published
- 2025-05-01
- DOI
- https://doi.org/10.1002/smsc.202570023
- Citations
- 1
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.73