Modeling of Multiquantum Well GaN‐Based Solar Cells Using a Quasi‐Equilibrium Green's Function Approach

This study examines the optoelectronic properties of nitride‐based multiquantum well solar cells, which are gaining importance in hybrid thermal‐photovoltaic applications due to their resilience to high temperatures. The investigation focuses on the current characteristics of these devices under six distinct illumination conditions. A self‐consistent approach is employed, combining the drift‐diffusion semiclassical framework with a Green's function‐based method to account for quantum effects associated with the quantum well structures. This hybrid method enhances the accuracy of the optoelectronic property predictions, as demonstrated by comparisons with simulations using only the drift‐diffusion model. A detailed analysis of a specific simulation case, compared with the experimental measurements of the cells under real concentrated sunlight, further highlights the significance of quantum effects in these systems, validating the proposed methodology.