Features of Manufacturing the Element Base of High-Temperature Electronics Using Laser Radiation

The paper presents the results of research on laser processing of natural and artificial diamond crystals in microelectronics technologies by thermal laser separation. An analysis of physical-chemical phenomena observed as a result of the thermal effect of laser radiation on anisotropic materials in various crystallographic directions is conducted. Based on the Griffiths criterion, the mechanics of brittle fracture as a result of the formation of critical micromechanical stresses caused by the thermal action of laser radiation are analyzed. The non-stationary problem of thermal conductivity was solved, temperature distributions in the volume of the material were calculated, on the basis of which information on the change of elastic properties of crystals leading to its controlled destruction in given directions was obtained. The simulation results were confirmed experimentally in the processes of thermal laser separation of rough diamonds by forming localized areas of critical thermoelastic microstresses at a given depth in the crystal volume, which are the starting point of the line of controlled crystal separation. Optimal modes of controlled separation of crystals of natural and artificial diamonds using a diode-pumped laser with a radiation wavelength of 1064 nm have been identified.