The generalized photo-thermo-elastic wave dynamics with a double porosity semiconductors under Lord–Shulman theory

This study investigates the propagation of generalized photo-thermoelastic waves in a double-porosity semiconductor medium under the framework of Lord Shulman (L-S) thermoelasticity theory. The interactions between plasma waves, thermal conduction, and elastic deformations are examined within a two-dimensional (2D) elastic half-space. The governing equations, incorporating the effects of carrier density, heat conduction, quasi-static electric fields, equilibrated stress, and elastic wave motion, are formulated and solved using harmonic wave analysis. The model considers mechanical forces, thermal constraints, and plasma boundary conditions at the interface adjacent to the vacuum to determine key physical behaviors. A numerical approach is employed to analyze the time-dependent response of the system, and the results are presented graphically to illustrate the influence of thermoelastic and thermoelectric coupling parameters on wave propagation. The findings demonstrate the significant role of double porosity in modifying stress distribution, temperature variations, and charge carrier behavior, providing insights into semiconductor physics and wave dynamics. The numerical method is utilized to provide thorough solutions in the time domain for the key physical processes under investigation. All numerical outcomes of physical functions are illustrated graphically.