Plasma–Chemical Low-Temperature Reduction of Aluminum with Methane Activated in Microwave Plasma Discharge
High-purity aluminum is widely used in metallurgy, microelectronics and chemical synthesis. In this work, the method of carbothermic reduction of aluminum powder in a microwave plasma discharge with the formation of valuable organic products such as synthesis gas, acetylene and benzene was used. Al powder was studied by inductively coupled plasma mass spectrometry (ICP-MS), scanning electron microscopy (SEM) and powder X-ray diffraction (XRD). The yield of by-products was studied by gas chromatography equipped with a mass spectrometer, as well as optical emission spectroscopy of plasma discharge. High-purity aluminum powder reduced with the plasma was used to synthesize oxygen-free trimethylaluminum (TMA). For the first time, TMA was synthesized in one vacuum cycle without the system depressurizing to improve the purity of the final product. Trimethylaluminum was analyzed by gas chromatography, which confirmed that the main substance is ≥99.99% pure. Gas chromatography with a mass spectrometer was used to determine by-products and residual reaction products. Additionally, ICP-MS was used to confirm trace metal concentrations, achieving the 7N standard for ultra-high-purity materials.
Authors
- Ivan Zanozin
- Alexander Logunov (ORCID: https://orcid.org/0000-0002-1283-4446)
- A. A. Maslov (ORCID: https://orcid.org/0000-0002-2568-1784)
- Andrey Vladimirovich Vorotyntsev (ORCID: https://orcid.org/0000-0001-5447-5296)
- Sergey S. Suvorov (ORCID: https://orcid.org/0000-0003-1913-0764)
- Anton N. Petukhov (ORCID: https://orcid.org/0000-0002-4904-7622)
- Artem S. Belousov (ORCID: https://orcid.org/0000-0001-6411-9762)
- С. В. Зеленцов (ORCID: https://orcid.org/0000-0002-1534-5306)
- I. O. Prokhorov (ORCID: https://orcid.org/0009-0003-5180-5394)
- Evgeniya Logunova
Institutions
- N. I. Lobachevsky State University of Nizhny Novgorod (RU)
Publication Details
- Journal
- Metals
- Published
- 2025-05-01
- DOI
- https://doi.org/10.3390/met15050514
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Russian Science Foundation