Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model

This paper elaborates on the proposal of a new analytical model for a non-ballistic transport scenario for Schottky barrier carbon nanotube field effect transistors (SB-CNTFETs). The non-ballistic transport scenario depends on incorporating the effects of acoustic phonon (A-Ph) and optical phonon (O-Ph) electron scattering mechanisms. The analytical model is rooted in the solution of the Landauer integral equation, which is modified to account for non-ballistic transport through a set of approximations applied to the Wentzel–Kramers–Brillouin (WKB) transmission probability and the Fermi–Dirac distribution function. Our proposed model was simulated to evaluate the total current and transconductance, considering scenarios both with and without the electron–phonon scattering effect. The simulation results revealed a substantial decrease of approximately 78.6% in both total current and transconductance due to electron–phonon scattering. In addition, we investigated the impact of acoustic phonon (A-Ph) and optical phonon (O-Ph) scattering on the drain current under various conditions, including different temperatures, gate lengths, and nanotube chiralities. This comprehensive analysis helps in understanding how these parameters influence device performance. Compared with experimental data, the model’s simulation results demonstrate a high degree of agreement. Furthermore, our fully analytical model achieves a significantly faster runtime, clocking in at around 2.726 s. This validation underscores the model’s accuracy and reliability in predicting the behavior of SB-CNTFETs under non-ballistic conditions.