Gate Tunable Josephson Diode Effect in Josephson Junctions Made from InAs Nanosheets

Abstract The observation of Josephson diode effect (JDE) is reported in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in‐plane magnetic field ( B xy ), non‐reciprocal superconducting switching current as well as non‐reciprocal superconducting retrapping current are detected. The strength of the JDE depends on the angle between the in‐plane magnetic field and the bias current ( I b ), reaching its maximum when B xy ⊥ I b and dropping to nearly zero when B xy ∥ I b . Additionally, the diode efficiency is tunable via an electrostatic gate with a complete suppression at certain gate voltages. These findings indicate that the observed JDE in InAs nanosheet‐based Josephson junctions most likely arises from the Rashba spin‐orbit interaction (SOI) in the nanosheets. Such gate‐tunable JDE in Josephson junctions made from semiconductor materials with SOI is useful not only for constructing advanced superconducting electronics but also for detecting novel superconducting states.