Optimizing unconventional trilayer SOTs for field-free switching

The symmetry and magnitude of unconventional spin–orbit torques in ferromagnet/heavy metal/ferromagnet trilayers are investigated. Several spin-generating mechanisms are considered such as the anomalous Hall effect, anisotropic magnetoresistance, the Rashba-Edelstein effect, and the spin Hall effect. Optimal material thicknesses and magnetization configurations for maximizing out-of-plane spin torques for breaking the bilayer symmetry are presented. Furthermore, field-free switching simulations of a perpendicular SOT-MRAM utilizing the optimized trilayer torques are demonstrated, showing improved switching currents compared to another reported trilayer-based device. • We investigate unconventional SOTs in trilayers to identify optimal configurations for achieving field-free switching of perpendicularly magnetized FMs. • The dependence of the out-of-plane SOTs on the FePt magnetization direction, reveals a strong angular dependence of the torque. • The simulation results of our proposed SOT-MTJ configuration suggest a drastic decrease in the required switching current.

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Publication Details

Journal
Solid-State Electronics
Published
2025-05-02
DOI
https://doi.org/10.1016/j.sse.2025.109135
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
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article

Optimizing unconventional trilayer SOTs for field-free switching

Wolfgang Goes, Viktor A. Sverdlov, Nils Petter Jørstad, S. Selberherr
4 links
Solid-State Electronics
Magnetic properties of thin films
article

Optimizing unconventional trilayer SOTs for field-free switching

Wolfgang Goes, Viktor A. Sverdlov, Nils Petter Jørstad, S. Selberherr
article en

Abstract

The symmetry and magnitude of unconventional spin–orbit torques in ferromagnet/heavy metal/ferromagnet trilayers are investigated. Several spin-generating mechanisms are considered such as the anomalous Hall effect, anisotropic magnetoresistance, the Rashba-Edelstein effect, and the spin Hall effect. Optimal material thicknesses and magnetization configurations for maximizing out-of-plane spin torques for breaking the bilayer symmetry are presented. Furthermore, field-free switching simulations of a perpendicular SOT-MRAM utilizing the optimized trilayer torques are demonstrated, showing improved switching currents compared to another reported trilayer-based device. • We investigate unconventional SOTs in trilayers to identify optimal configurations for achieving field-free switching of perpendicularly magnetized FMs. • The dependence of the out-of-plane SOTs on the FePt magnetization direction, reveals a strong angular dependence of the torque. • The simulation results of our proposed SOT-MTJ configuration suggest a drastic decrease in the required switching current.

Solid-State ElectronicsVol. 228
TU Wien (AT), Silvaco (United Kingdom) (GB)
Österreichische Nationalstiftung für Forschung, Technologie und Entwicklung, Christian Doppler Forschungsgesellschaft, Technische Universität Wien Bibliothek
Openalex Percentile: Top 93%
Magnetic properties of thin films
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Optimizing unconventional trilayer SOTs for field-free switching — Wolfgang Goes, Viktor A. Sverdlov, et al. · Solid-State Electronics (2025) | TGRS Research Map | TGRS