Optoelectronic Artificial Synapses Based on ZnO/Nanoporous Hybrid Thin Film by Atomic/Molecular Layer Deposition
An optoelectronic artificial synapse device has been established based on ZnO/Zn-HQ nanoporous hybrid thin films by atomic/molecular layer deposition. This unique nanoporous microstructure in devices significantly enhances the optoelectronic response and relaxation time, enabling important biosynaptic functions under optical stimuli, such as Pavlov's dog experiment and pattern recognition. The mechanism of ionization-deionization of oxygen vacancies has been proposed for this device.
Authors
- Chuyi Zhang (ORCID: https://orcid.org/0000-0003-3369-1883)
- Di Wu (ORCID: https://orcid.org/0000-0003-3619-1411)
- Aidong Li (ORCID: https://orcid.org/0000-0003-3628-0393)
- Song Sun (ORCID: https://orcid.org/0000-0001-9944-7192)
- Yidong Xia (ORCID: https://orcid.org/0000-0003-1072-1568)
- Lin Zhu (ORCID: https://orcid.org/0000-0001-6687-2707)
- Yuchen Li (ORCID: https://orcid.org/0000-0002-7460-315X)
- Shuang Chen (ORCID: https://orcid.org/0000-0003-1334-2213)
Institutions
- Division of Materials Science and Engineering (AU)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Nanjing University (CN)
Publication Details
- Journal
- The Journal of Physical Chemistry Letters
- Published
- 2025-05-02
- DOI
- https://doi.org/10.1021/acs.jpclett.5c00856
- Citations
- 4
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 2.92
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Jiangsu Province