Design of Nonvolatile and Multinode-Upset Recoverable Latches Based on Magnetic Tunnel Junction and CMOS
Spintronic devices, such as magnetic tunnel junctions (MTJs), are promising for space applications due to their radiation hardness and nonvolatility. However, as semiconductor technology advances, CMOS peripheral circuits are becoming vulnerable to double node upset (DNU) as well as triple node upset (TNU). This brief proposes two nonvolatile and robust latch designs primarily composed of MTJs and C-elements (CEs). Both designs offer nonvolatility and self-recovery from multiple-node upsets. Simulation results demonstrate that the proposed latches provide nonvolatility and complete protection against multiple-node upsets with balanced overhead.
Authors
- Patrick Girard (ORCID: https://orcid.org/0000-0003-0722-8772)
- Aibin Yan (ORCID: https://orcid.org/0000-0003-0024-987X)
- Na Bai (ORCID: https://orcid.org/0000-0001-9596-8142)
- Zhengfeng Huang (ORCID: https://orcid.org/0000-0001-8695-4478)
- Xiaoqing Wen (ORCID: https://orcid.org/0000-0001-8305-604X)
- Tianming Ni (ORCID: https://orcid.org/0000-0001-6272-8660)
- Yue Zhang (ORCID: https://orcid.org/0000-0001-6893-7199)
- Yongkang Xu
Institutions
- Anhui University (CN)
- Hefei University of Technology (CN)
- Université de Montpellier (FR)
- Kyushu Institute of Technology (JP)
- Laboratoire d'Informatique, de Robotique et de Microélectronique de Montpellier (FR)
- Anhui Polytechnic University (CN)
Publication Details
- Journal
- IEEE Transactions on Very Large Scale Integration (VLSI) Systems
- Published
- 2025-05-02
- DOI
- https://doi.org/10.1109/tvlsi.2025.3562769
- Primary Topic
- Magnetic properties of thin films
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Natural Science Foundation of China