Simulation of homojunction p-i-n indium gallium nitride solar cells under high sunlight concentration

Abstract This research investigates performance of homojunction p-i-n indium gallium nitride (InGaN) solar cells under concentrated sunlight (from 50 to 500 suns), utilizing SCAPS-1D simulation. The In 0.4 Ga 0.6 N solar cells demonstrate outstanding photovoltaic (PV) characteristics under high sunlight concentration. Under 50 suns, the solar cell exhibits short-circuit current density (J sc ) of 1.07 A cm −2 , open-circuit voltage (V oc ) of 1.63 V, fill factor (FF) of 91.73%, and power conversion efficiency (PCE) of 32.06%. On the other hand, under 500 suns, the cell demonstrates higher PV performance with J sc of 10.67 A cm −2 , V oc of 1.69 V, FF of 92.01%, and PCE of 33.35%. This work also investigates temperature-dependent performance characteristics, revealing a significant increase in J sc and a consistent decline in V oc , efficiency, and FF with elevated temperatures (300–700 K), across all the sunlight concentrations. The research highlights the capability of the homojunction p-i-n InGaN solar cells to deliver high PCE under high sunlight concentration.