ReRAM Performance Enhancement: Investigation of Bipolar Resistive Switching Behavior in BFO Thin Films for FTO/BFO/Ag Devices

This work evaluates the bipolar resistive switching (RS) characteristics of BiFeO 3 (BFO) thin films deposited via the sol-gel spin-coating technique at substrate temperatures ranging from 300 °C to 500 °C. Structural analysis confirmed that all deposited BFO thin films exhibit a polycrystalline nature with a rhombohedral crystal structure. Morphological studies showed that the BFO thin film layers had a uniform grain distribution, free from voids and micro-cracks. The XPS analysis revealed the valence states and surface chemical bonds of the constituent elements in the BFO matrix. The BFO switching layers were incorporated into FTO/BFO/Ag device structures, with fluorine-doped tin oxide (FTO) serving as the bottom electrode and silver (Ag) as the top electrode. The resistive switching characteristics of these devices were systematically analyzed. The fabricated FTO/BFO/Ag devices exhibited bipolar RS (current-voltage (I–V)) behavior with consistent endurance cycles. The observed RS behavior was attributed to the formation and disruption of conductive pathways within the BFO switching layer.