Angle-dependent growth of 2D MoS₂ monolayer, bilayer by chemical vapor deposition method

Abstract 2D Molybdenum disulfide (MoS 2 ) has gained significant scientific interest owing to its notable electronic and optoelectronic properties. Growing large areas, high-quality monolayer MoS 2 flakes, and continuous MoS 2 monolayer films remain challenging. Here, we report the chemical vapor deposition (CVD) growth of few-layer, bilayer flakes and a continuous monolayer of MoS 2 on a Si/SiO 2 substrate by mounting the substrate at different inclinations. The morphologies and number of layers change as the substrate is placed at specific angles (90°, 60°, and 30°), respectively. This method facilitates a new pathway for the growth of the MoS 2 monolayer.