Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots

Abstract Semiconductor quantum dots (QDs) are high-quality nanocrystals that provide three-dimensional carrier confinement on the scale of the de Broglie wavelength. This makes them ideal candidates as light emitters, especially in the emerging field of photonic quantum technologies, where they can act as quantum light sources. However, their self-assembled epitaxial growth leads to randomness in position and emission wavelength, which hinders their scalable integration into photonic quantum devices. This review summarizes and highlights advances in the site-controlled growth of high-quality epitaxial QDs, with a particular focus on the buried stressor concept. Compared to other QD positioning techniques based for instance on nanohole arrays, nanowire arrays, and arrays of inverted pyramids as dot nucleation centers, the buried stressor growth method is distinguished by its ability to achieve not only spatial accuracy and precision, but also control of the local QD density in combination in an industry-compatible process flow. Therefore, the buried stressor growth technique is highly suitable for the development of both QD-based quantum light sources and microlasers. The buried stressor site-controlled QD growth technique involves the sub-surface embedding of a nano-engineered stressor material, which generates localized strain fields at the growth surface that control the nucleation of QDs. We provide an in-depth review of the underlying mechanisms and technological implementations, and discuss the differences and comparative advantages of the buried stressor method over other techniques for site-controlled growth of QDs. We also address persistent challenges, such as scalability and integration with existing semiconductor technologies, and outline potential future research directions.