Probing vertical magnetic fields with negative capacitance GAA-FinFET: sensitivity and performance analysis

Abstract This paper introduces a new magnetic sensing device termed MAG-NCGAA-FinFET, built upon the traditional Gate-All-Around (GAA)-FinFET structure. Designed to detect vertical magnetic fields, it features two contacts on either side of the drain and operates on the current mode of the Hall-effect, diverting drain currents at both contact points. Unlike conventional magnetic sensors, the proposed MAG-NCGAA-FinFET leverages its superior electrostatic control and unique structural advantages to achieve higher sensitivity and lower power consumption. Magnetic measurements are achieved by applying a magnetic field in the positive y-direction with a 700 μA drain current bias. Additionally, the impact of the fin width on the device’s characteristics and sensitivity has been thoroughly investigated. The study reveals a proportional increase in both differential currents and relative sensitivity with the augmentation of the fin width parameter. The impact of temperature on magnetic sensitivity has been assessed, revealing a notable enhancement in relative sensitivity for the device as the temperature decreases. Through comprehensive simulations, we demonstrate that the device exhibits significant performance improvements over existing technologies, making it highly suitable for integration into modern sensing systems. The insights gained from this study open new avenues for the development of compact and efficient magnetic sensors.