Extreme bandgap polarization doped AlGaN layers on bulk AlN for pn-diodes with an 8.5 MV cm<sup>−1</sup> breakdown field and forward current density exceeding 20 kA cm<sup>−2</sup>
Abstract In this paper we present a study of distribution polarization doped Al x Ga 1− x N layers and their use in quasi-vertical configuration pn-diodes which exhibited a high breakdown field of ∼8.5 MV cm −1 and a large forward current density (∼23 kA cm −2 ). We also establish their potential use in UVC light emitters by studying the optical emission from a quantum well inserted at the distribution polarization doped pn-junction interface.
Authors
- G. Simin (ORCID: https://orcid.org/0000-0001-9224-3787)
- Abdullah Al Mamun Mazumder (ORCID: https://orcid.org/0000-0003-4964-4133)
- Tariq Jamil (ORCID: https://orcid.org/0000-0002-7321-4654)
- Kenneth Stephenson (ORCID: https://orcid.org/0000-0003-0081-2941)
- M. Azizar Rahman (ORCID: https://orcid.org/0000-0002-5433-4124)
- Asif Khan (ORCID: https://orcid.org/0000-0002-4542-6553)
- Muhammad Ali (ORCID: https://orcid.org/0000-0002-2810-1538)
Institutions
- South Carolina Department of Education (US)
- University of South Carolina (US)
- Columbia College - South Carolina (US)
- University of South Carolina System (US)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-05-01
- DOI
- https://doi.org/10.35848/1347-4065/add2b6
- Citations
- 2
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 2.52
Funders
- Defense Advanced Research Projects Agency
- Army Research Office