Enhanced growth temperature window and Sb doping of rutile GeO<sub>2</sub> enabled by graded buffer layers
Abstract Rutile-structured germanium dioxide (r-GeO 2 ) has garnered attention as a next-generation ultrawide-bandgap material owing to its potential for ambipolar doping and high breakdown field. In this study, we investigated the growth of single-phase r-GeO 2 thin films on (001) TiO 2 substrates with graded Ge x Sn 1− x O 2 buffer layers using mist chemical vapor deposition. The graded buffer layers expanded the growth temperature window from 550 °C to 850 °C and facilitated Sb doping for n -type conductivity. Secondary ion mass spectrometry confirmed the incorporation of Sb into the r-GeO 2 epilayer at a concentration of ∼10 21 cm −3 . This work contributes to the development of r-GeO 2 for power device applications.
Authors
- Kazuki Shimazoe (ORCID: https://orcid.org/0000-0001-7710-0411)
- Hiroyuki Nishinaka (ORCID: https://orcid.org/0000-0003-1878-0765)
- Kazutaka Kanegae (ORCID: https://orcid.org/0000-0002-3801-0138)
- Ichiro Seike
Institutions
- Kyoto Institute of Technology (JP)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-05-01
- DOI
- https://doi.org/10.35848/1347-4065/add2b4
- Citations
- 6
- Primary Topic
- Photonic and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 4.38
Funders
- Japan Society for the Promotion of Science
- Fusion Oriented REsearch for disruptive Science and Technology