Li<sup>+</sup> and B<sup>3+</sup> Co-Doping Induced Near-Infrared Emission Enhancement of Ga<sub>1.6</sub>Sc<sub>0.4</sub>O<sub>3</sub>:Cr<sup>3+</sup>
Broadband near-infrared (NIR) phosphors with external quantum efficiency exceeding 50% are still extremely scarce. In this work, the introduced Li + ions replacing Ga 3+ sites and B 3+ ions occupying interstitials synergistically improve the local environment of Cr 3+ in Ga 1.6 Sc 0.4 O 3 (GSO) host, raising its external quantum efficiency from 42.3 to 51.9%. The NIR phosphor-converted light-emitting diode (pc-LED) fabricated by combining the optimized GSO: Cr 3+ , Li + , B 3+ phosphor with 450 nm LED chip shows photoelectric efficiency of 34.14% at 5 mA, indicating that the improved GSO:Cr 3+ , Li + , B 3+ phosphor has excellent potential for broadband NIR light source application.
Authors
- Siguo Xiao (ORCID: https://orcid.org/0000-0002-5033-782X)
- Kun Zhang (ORCID: https://orcid.org/0000-0001-9666-2153)
Institutions
- Xiangtan University (CN)
Publication Details
- Journal
- ECS Journal of Solid State Science and Technology
- Published
- 2025-05-01
- DOI
- https://doi.org/10.1149/2162-8777/add295
- Citations
- 1
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.43