Characterization of long-cavity GaN vertical-cavity surface-emitting lasers with a topside dielectric lens
Abstract We present a high-performance GaN-based vertical-cavity surface-emitting laser with a long cavity (70 λ ), nanoporous GaN distributed Bragg reflector (DBR), and topside dielectric lens, achieving room-temperature continuous-wave operation up to thermal rollover at 34 kA cm −2 and a peak output power of 2.7 mW. Process optimizations significantly improved the lens surface quality, reducing optical losses. The long cavity improved thermal management, leading to a measured thermal impedance of 607 K W −1 , the lowest reported for GaN vertical-cavity surface-emitting lasers (VCSELs) with a nanoporous DBR. Spatial mode analysis revealed structured Laguerre–Gaussian-like patterns, with evidence of coherent speckle. These results demonstrate the viability of long-cavity designs for high-power GaN VCSELs.
Authors
- Nathan Palmquist (ORCID: https://orcid.org/0000-0001-5413-1645)
- Hsun–Ming Chang (ORCID: https://orcid.org/0000-0001-9341-7208)
- Shuji Nakamura (ORCID: https://orcid.org/0000-0002-0195-1428)
- Steven P. DenBaars (ORCID: https://orcid.org/0000-0002-6612-5258)
- Srinivas Gandrothula (ORCID: https://orcid.org/0000-0002-1572-0057)
- Stephen Gee (ORCID: https://orcid.org/0000-0002-2082-5929)
- Xianqing Li
Institutions
- University of California, Santa Barbara (US)
Publication Details
- Journal
- Japanese Journal of Applied Physics
- Published
- 2025-05-01
- DOI
- https://doi.org/10.35848/1347-4065/add2b8
- Primary Topic
- Semiconductor Lasers and Optical Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00