Characterization of long-cavity GaN vertical-cavity surface-emitting lasers with a topside dielectric lens

Abstract We present a high-performance GaN-based vertical-cavity surface-emitting laser with a long cavity (70 λ ), nanoporous GaN distributed Bragg reflector (DBR), and topside dielectric lens, achieving room-temperature continuous-wave operation up to thermal rollover at 34 kA cm −2 and a peak output power of 2.7 mW. Process optimizations significantly improved the lens surface quality, reducing optical losses. The long cavity improved thermal management, leading to a measured thermal impedance of 607 K W −1 , the lowest reported for GaN vertical-cavity surface-emitting lasers (VCSELs) with a nanoporous DBR. Spatial mode analysis revealed structured Laguerre–Gaussian-like patterns, with evidence of coherent speckle. These results demonstrate the viability of long-cavity designs for high-power GaN VCSELs.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2025-05-01
DOI
https://doi.org/10.35848/1347-4065/add2b8
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

Characterization of long-cavity GaN vertical-cavity surface-emitting lasers with a topside dielectric lens

Nathan Palmquist, Hsun–Ming Chang, Shuji Nakamura, Steven P. DenBaars et al.
Japanese Journal of Applied Physics
Semiconductor Lasers and Optical Devices
article

Characterization of long-cavity GaN vertical-cavity surface-emitting lasers with a topside dielectric lens

Nathan Palmquist, Hsun–Ming Chang, Shuji Nakamura, Steven P. DenBaars, Srinivas Gandrothula, Stephen Gee, Xianqing Li
article en

Abstract

Abstract We present a high-performance GaN-based vertical-cavity surface-emitting laser with a long cavity (70 λ ), nanoporous GaN distributed Bragg reflector (DBR), and topside dielectric lens, achieving room-temperature continuous-wave operation up to thermal rollover at 34 kA cm −2 and a peak output power of 2.7 mW. Process optimizations significantly improved the lens surface quality, reducing optical losses. The long cavity improved thermal management, leading to a measured thermal impedance of 607 K W −1 , the lowest reported for GaN vertical-cavity surface-emitting lasers (VCSELs) with a nanoporous DBR. Spatial mode analysis revealed structured Laguerre–Gaussian-like patterns, with evidence of coherent speckle. These results demonstrate the viability of long-cavity designs for high-power GaN VCSELs.

Japanese Journal of Applied PhysicsVol. 64(5)
University of California, Santa Barbara (US)
Openalex Percentile: Top 93%
Semiconductor Lasers and Optical Devices
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