Near-infrared light-emitting diode based on graphene/layered γ-InSe Schottky junction

The on-chip near-infrared (NIR) light source devices based on van der Waals (vdW) layered materials are increasingly sought after due to their broad applications, including optoelectronic communication, computing, and sensing. The accomplishment of the electrical injection of electrons and holes is highly attractive as a step toward the realization of electrically driven NIR lasers for communication systems. Here, we demonstrated a NIR light-emitting diode (LED) device based on γ-InSe microflakes. The device was constructed by stacking few-layer graphene (Gr) and layered γ-InSe to form Gr/γ-InSe/Gr heterostructure. Thanks to the high-quality Schottky junction, room temperature electrically driven NIR light emission from γ-InSe was successfully achieved. Our results exhibit a simple method to construct NIR LED device based on vdW layered material, indicating the promise of γ-InSe for on-chip integrated optoelectronic devices.