Effect of Annealing Time of GaN Buffer Layer on Curvature and Wavelength Uniformity of Epitaxial Wafer

In this study, the curvature changes of an unintentionally doped GaN end and third quantum well were observed in situ when the annealing times of a GaN buffer layer were 40 s, 50 s and 55 s, respectively. When the annealing time was increased from 40 s to 50 s, the concave curvature of the unintentionally doped GaN end and the third quantum well became smaller. When the annealing time was increased to 55 s, there was no significant change in curvature. These curvature changes are related to the relaxation of the stress in the epitaxial wafer with different annealing times. With the increase in buffer annealing time, the compressive stress and warpage decreased gradually, and the photoluminescence wavelength of the sample became longer. Meanwhile, the standard deviation yield of the dominant wavelength was increased by 5.46%, and the wavelength yield was increased by 19.45% when the annealing time was changed from 40 s to 50 s.