High-speed low-noise InGaAs/InP PIN photodetectors on a Si platform achieved by oxygen plasma activation bonding
In this paper, we report the hydrophilic wafer bonding of a 2 in. InP-based InGaAs/InP epitaxial film to a SiO<sub>2</sub>/Si substrate using oxygen plasma surface activation. The fabricated vertical Si-based InGaAs/InP PIN photodetectors exhibit an exceptionally low surface leakage current of 2.32 nA/cm and a bulk leakage current of 37.47 nA/cm<sup>2</sup> at -1 V. The device with a diameter of 13 μm achieves a remarkable 3 dB bandwidth of 30.453 GHz. Furthermore, the 70 μm diameter device has a response rate of 0.87 A/W and 0.58 A/W at 1370 nm and 1660 nm, respectively.
Authors
- Xiaolong Jiang (ORCID: https://orcid.org/0000-0001-8691-074X)
- Zhiwei Huang (ORCID: https://orcid.org/0000-0002-1347-6812)
- Zhanren Wang
- Jinrong Zhou (ORCID: https://orcid.org/0000-0001-9901-2236)
- Wenhao Meng
- Guanzhou Liu
- Xiaoying Zhang (ORCID: https://orcid.org/0000-0002-0868-0296)
- Shaoying Ke
- Yiliang Diao
- Menghui Guo (ORCID: https://orcid.org/0000-0002-5176-3062)
Institutions
- Xiamen University of Technology (CN)
Publication Details
- Journal
- Optics Letters
- Published
- 2025-05-01
- DOI
- https://doi.org/10.1364/ol.559090
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- Natural Science Foundation of Xiamen City
- National Natural Science Foundation of China
- Natural Science Foundation of Fujian Province