Design and assessment of the electrical characteristics of Cs2AgBi0.75Sb0.25Br6 perovskite solar cell: A numerical study

A new generation of lead-free perovskites with the general formula A2BIBIIIX6 has recently attracted the attention of researchers as potential absorber materials for efficient and cost-effective solar cells. In this work, the perovskite Cs2AgBi0.75Sb0.25Br6 is numerically evaluated as an absorbing material for a perovskite (PVSK) solar cell due to its stability and aligned bandgap via the SCAPS 1D program. The electron transport (ET) layer, such as IGZN, PCBM, TiO2, WS2, and Zn (O0.3, S0.7), along with the hole transport (HT) layer, which includes GO, MoO3, Sb2S3, V2O5, Zn3P2, and CuSbS2 are examined to verify the superior ET and HT from the materials listed above. In addition, a further study on the electrical output of a PVSK solar cell is performed by evaluating the adjustment impact of the PVSK, ET, and HT layer thickness, doping concentration, defect density, electron affinity, and temperature. The results showed that the best performance was obtained by selecting Zn(O0.3, S0.7) as an ET layer and V2O5 as HT layer. Moreover, the post-optimization outcomes revealed a maximum power conversion efficiency (PCE) with filling factor (FF), open-circuit voltage (Voc), and short-circuit current density (Jsc) of 28.43 %, 91.94 %, 1.68 V, and 18.37 mA/cm2 for the FTO/Zn(O0.3, S0.7)/Cs2AgBi0.75Sb0.25Br6/V2O5/Pt solar cell at a temperature of 300 K. A comparative analysis of the current density-voltage (J-V) and quantum efficiency (QE) curves has also been conducted between the initial and optimized structures. Consequently, the present study offers significant insight into developing effective Pb-free double PVSK solar cells that could be a viable alternative to existing Pb-based halide PVSK solar cells.