A Proposal of a Hetero Junction Bipolar Phototransistor

A hetero junction bipolar phototransistor is proposed in this short communication by adding a second n-Si junction in reverse bias to the already proposed photodiodes on intrinsic semiconductor materials. The transistor having the nano-GaAs emitter can function in the visible range of the electromagnetic spectrum.

Authors

Ravi Kumar Chanana

Publication Details

Journal: Applied sciences research periodicals.
Published: 2025-05-01
DOI: https://doi.org/10.63002/asrp.303.929
Primary Topic: Sensor Technology and Measurement Systems
Type: article
Field-Weighted Citation Impact: 0.00

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article

A Proposal of a Hetero Junction Bipolar Phototransistor

Ravi Kumar Chanana

May 1, 2025

Applied sciences research periodicals.

Sensor Technology and Measurement Systems

article

A Proposal of a Hetero Junction Bipolar Phototransistor

Ravi Kumar Chanana

May 1, 2025article en

Abstract

Applied sciences research periodicals.Vol. 3(03)

Openalex Percentile: Top 91%

Sensor Technology and Measurement Systems

DOI Open Access PDF OpenAlex

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A Proposal of a Hetero Junction Bipolar Phototransistor — Ravi Kumar Chanana · Applied sciences research periodicals. (2025) | TGRS Research Map | TGRS