Design of a 1700V-300A 62mm SiC MOSFET Module

SiC devices possess characteristics such as high voltage resistance, low loss, and high thermal conductivity, making them highly advantageous for applications in smart grids, new energy power generation, and rail transit. This paper focuses on the design methodology of a high-power, high-voltage, and high-current module by designing a 1700V-300A 62mm SiC MOSFET module. Initially, the SiC MOSFET chip and SiC SBD chip were calculated and selected; subsequently, the layout and wiring of the SiC MOSFET module chip were designed using Solidworks software for physical modeling. Furthermore, Q3D software was employed to extract parasitic parameters of the model while establishing an equivalent circuit model of the SiC MOSFET module simulated through LTspice software. Finally, ANSYS software was utilized for thermal simulation analysis of the module's performance after conducting double pulse tests. The results show that the module in this paper has good performance and has certain application value.