Simulation and Optimization of On-Die Termination Based on DDR5

With the continuous development of information technology, data is showing an explosive growth trend, and the huge amount of data requires higher requirements for fast transmission and stable storage. Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) is often used as a cache space for massive data and has a wide range of applications in both industrial and civilian settings. The On-Die Termination (OTD) technology in DDR incorporates terminal resistors into the DDR chip to improve the signal integrity of the channel. DFE provides a good equalization scheme for DDR links. This article is based on the DDR5 protocol and builds simulation models under different configurations. Then, OTD optimization and DFE optimization are carried out under different configurations, effectively improving the performance of the DDR interface after optimization.