Compact Model of β-Ga₂O₃ Schottky Barrier Diode

Gallium oxide is emerging as a leading ultra-wide bandgap material for future applications. Metals with large work functions have been used with β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> (the most stable polytype of gallium oxide) to form the Schottky barrier diode. In this work, a β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Schottky barrier diode has been characterized using the Keysight B1505A curve tracer. The IV characteristics of the β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> die are measured with four probe measurements. A diode spice model for β-Ga<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf>O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Schottky barrier diode has been developed based on diffusion mechanism and charge control continuity equation. A series resistance is also included in the diode spice model. The model has shown good agreement on both linear and logarithmic scale. Transient simulation for half and full bridge rectifier circuit has been performed with the model.