Investigating the Temperature Dependency and Operating Parameters of a Self-Driving Active Gate Driver

A self-driving active gate driver for silicon carbide devices is presented, which is designed to reduce current overshoot and parasitic ringing caused by high dE/dC and d8/dC transients while enabling high switching speeds, with the objective of reducing switching losses. An investigation into the impact of varying operating parameters and ambient temperature measurements across a temperature range of −40 °C – 125 °C was conducted to assess the influence of a v<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> shift and the temperature dependency of the Miller plateau on the active gate driver network. The results demonstrated a reduction in turn-on switching losses compared to a conventional gate driver network across all measurements.