Comparative Performance Analysis of Medium Voltage 3L-ANPC and 3L-DNPC Pole Enabled by series-Connection of 10kV SiC MOSFETs and 10kV SiC JBS Diodes for Sine Triangle PWM Operation

This paper presents a comparative performance analysis of Medium Voltage three-level Active Neutral Point Clamped (ANPC) and Diode Neutral Point Clamped (DNPC) converters, utilizing series-connected 10kV Silicon Carbide (SiC) MOSFETs and 10kV SiC Junction Barrier Schottky (JBS) diodes. Switching transitions for both topologies were mathematically modeled, accounting for critical factors such as reverse recovery current, variable device capacitance, base plate current, and parasitic bus bar inductance to accurately represent dynamic behavior. Dynamic voltage balancing and switching loss reduction were achieved using two distinct approaches: turn-off delay control strategies and R-C snubber design techniques. Validation of the proposed scheme on a three-level test bench with a 7.5kV DC bus and a 10A load current demonstrated its effectiveness in enhancing converter performance under practical conditions.

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Published
2025-03-16
DOI
https://doi.org/10.1109/apec48143.2025.10977099
Primary Topic
Silicon Carbide Semiconductor Technologies
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article
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article

Comparative Performance Analysis of Medium Voltage 3L-ANPC and 3L-DNPC Pole Enabled by series-Connection of 10kV SiC MOSFETs and 10kV SiC JBS Diodes for Sine Triangle PWM Operation

Raj Kumar Kokkonda, Subhashish Bhattacharya, Nithin Kolli, Sanket Parashar et al.
Silicon Carbide Semiconductor Technologies
article

Comparative Performance Analysis of Medium Voltage 3L-ANPC and 3L-DNPC Pole Enabled by series-Connection of 10kV SiC MOSFETs and 10kV SiC JBS Diodes for Sine Triangle PWM Operation

Raj Kumar Kokkonda, Subhashish Bhattacharya, Nithin Kolli, Sanket Parashar, Shubham Rawat
article en

Abstract

This paper presents a comparative performance analysis of Medium Voltage three-level Active Neutral Point Clamped (ANPC) and Diode Neutral Point Clamped (DNPC) converters, utilizing series-connected 10kV Silicon Carbide (SiC) MOSFETs and 10kV SiC Junction Barrier Schottky (JBS) diodes. Switching transitions for both topologies were mathematically modeled, accounting for critical factors such as reverse recovery current, variable device capacitance, base plate current, and parasitic bus bar inductance to accurately represent dynamic behavior. Dynamic voltage balancing and switching loss reduction were achieved using two distinct approaches: turn-off delay control strategies and R-C snubber design techniques. Validation of the proposed scheme on a three-level test bench with a 7.5kV DC bus and a 10A load current demonstrated its effectiveness in enhancing converter performance under practical conditions.

North Carolina State University (US)
Affordable and clean energy
Openalex Percentile: Top 93%
Silicon Carbide Semiconductor Technologies
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Comparative Performance Analysis of Medium Voltage 3L-ANPC and 3L-DNPC Pole Enabled by series-Connection of 10kV SiC MOSFETs and 10kV SiC JBS Diodes for Sine Triangle PWM Operation — Raj Kumar Kokkonda, Subhashish Bhattacharya, et al. · (2025) | TGRS Research Map | TGRS