A Novel GaN-HEMT Single-Phase Single-Stage Buck-Boost Micro-Inverter Topology for PV Applications

To enhance the input voltage compatibility of single-stage inverters used in medium-power solar energy products, a novel single-phase, single-stage inverter topology is proposed in this paper. The switching states and modulation methods are analyzed. Based on steady-state analysis, its transfer gain is derived, and a linearized modulation method is proposed. The proposed topology is implemented with GaN-HEMT devices on a 300W prototype with 100kHz switching frequency. Selected experimental results verify the proposed topology and modulation method.

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Published
2025-03-16
DOI
https://doi.org/10.1109/apec48143.2025.10977528
Citations
1
Primary Topic
Silicon Carbide Semiconductor Technologies
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article
Field-Weighted Citation Impact
0.73
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article

A Novel GaN-HEMT Single-Phase Single-Stage Buck-Boost Micro-Inverter Topology for PV Applications

Uiliam Kutrolli, Ali M. Bazzi, Pengwei Li
1 citations
Silicon Carbide Semiconductor Technologies
0.73
article

A Novel GaN-HEMT Single-Phase Single-Stage Buck-Boost Micro-Inverter Topology for PV Applications

Uiliam Kutrolli, Ali M. Bazzi, Pengwei Li
article en
1 citations

Abstract

To enhance the input voltage compatibility of single-stage inverters used in medium-power solar energy products, a novel single-phase, single-stage inverter topology is proposed in this paper. The switching states and modulation methods are analyzed. Based on steady-state analysis, its transfer gain is derived, and a linearized modulation method is proposed. The proposed topology is implemented with GaN-HEMT devices on a 300W prototype with 100kHz switching frequency. Selected experimental results verify the proposed topology and modulation method.

University of Connecticut (US)
Affordable and clean energy
Openalex Percentile: Top 29%
Silicon Carbide Semiconductor Technologies
0.73
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